Fairchild Semiconductor fdn337n free download

File name fdn337n.pdf

March 1998 FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 N-Channel logic level enhancement mode 2.2 A, 30 V, RDS(ON) = 0.065 @ VGS = 4.5 V power field effect transistors are produced using Fairchild's RDS(ON) = 0.082 @ VGS = 2.5 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize Industry standard outline SOT-23 surface mount on-state resistance. These devices are particularly suited for package using proprietary SuperSOTTM-3 design for low voltage applications in notebook computers, portable superior thermal and electrical capabilities. phones, PCMCIA cards, and other battery powered circuits High density cell design for extremely low RDS(ON). where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Exceptional on-resistance and maximum DC current capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D 3 37 S SuperSOT -3 TM G G S Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter FDN337N Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage - Continuous